By Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns
This e-book presents a finished monograph on gate stacks in semiconductor expertise. It covers the most important most up-to-date advancements and fundamentals and may be precious as a reference paintings for researchers, engineers and graduate scholars alike. The reader gets a transparent view of what has been performed to date, what's the cutting-edge and that are the most demanding situations forward ahead of we come any toward a manageable Ge and III-V MOS expertise.
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Extra info for Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics)
Rim, P. O’Neil, R. Mo, K. Chan, C. Cabral, C. Lavoie, D. Mocuta, A. M. 18 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. S. Takagi Mitchell, J. Mezzapelle, F. Jamin, M. Sendelbach, H. Kermel, M. Gribelyuk, A. A. Jenkins, S. H. Ku, M. Y. Yang, E. Leobandung, P. Agnello, W. Haensch, and J. Welser, Int. Electron Devices Meet. Tech. , San Francisco, p. -S. Goo, Q. Xiang, Y. Takamura, H. Wang, J. Pan, F. Arasnia, E. N. Paton, P. V. Sidorov, E. Adem, A. Lochtefeld, G. T. Currie, R. T. -R. Lin: IEEE Electron Device Lett.
Thermal desorption characteristics of the hydrogens from Si(100) surface treated by dilute HF and UPW rinsing 36 A. Teramoto and T. Ohmi 505ЊC 380ЊC :H atom : Si atom Fig. 24. Schematic molecular model of the hydrogen-terminated Si(100) surface 520◦ C . Hydrogen is desorbed from the Si(110) surface only at 530◦ C (shown in Fig. 25). 26 shows the characteristics of the TDS characteristics of (A) Si(100) and (B) Si(110) surfaces just after dilute HF treatment and UPW rinsing and after exposure to air for 2 and 12 h after dilute HF treatment and UPW rinsing.
The noise power is proportional to 1/f . The 1/f noise of p-MOSFET on Si(110) is 1 order of magnitude smaller, although current drivability is the as same as for n-MOSFETs on Si(100). 1 1 Eeff [MV/cm] Fig. 10. µeﬀ -Eeﬀ characteristics of conventional and Si/SiO2 ﬂattened nMOSFETs. The µeﬀ value can be improved by Si/SiO2 ﬂattening A. Teramoto and T. 9 0Њ 45Њ 90Њ 135Њ 180Њ Channel direction Fig. 11. Channel direction dependency of normalized ID on Si(110). Normalized ID is deﬁned as ID /(conventional ID 110 ) consistent with the observation that the Si/SiO2 interface is very smooth after processing .
Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics) by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns